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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB

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Country/Region:china
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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB

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Brand Name :Infineon Technologies
Model Number :IRFB7434PBF
Certification :RoHS
Place of Origin :United States
MOQ :50 PCS
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T
Supply Ability :20K PCS
Delivery Time :2-3 DAYS
Packaging Details :50 PCS/Tube
Category :Single FETs, MOSFETs
Mfr :Infineon Technologies
Series :HEXFET®, StrongIRFET™
Product Status :Active
FET Type :N-Channel
Technology :MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :40V
Current - Continuous Drain (Id) @ 25°C :195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :6V, 10V
Rds On (Max) @ Id, Vgs :1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :324 nC @ 10 V
Vgs (Max) :±20V
Input Capacitance (Ciss) (Max) @ Vds :10820 pF @ 25 V
Power Dissipation (Max) :294W (Tc)
Operating Temperature :-55°C ~ 175°C (TJ)
Mounting Type :Through Hole
Supplier Device Package :TO-220AB
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IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB

Features:

Category Single FETs, MOSFETs
Mfr Infineon Technologies
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 324 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10820 pF @ 25 V
Power Dissipation (Max) 294W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names SP001575514
2156-IRFB7434PBF
IFEINFIRFB7434PBF
Standard Package 50

Data Picture:https://www.infineon.com/dgdl/irfb7434pbf.pdf?fileId=5546d462533600a401535616a43e1e55

IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc  Through Hole TO-220AB

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