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BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3

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BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3

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Brand Name :ST
Model Number :BUF420AW
Certification :RoHS
Place of Origin :Malaysia
MOQ :30 PCS
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T
Supply Ability :6K PCS
Delivery Time :2-3 DAYS
Packaging Details :30 PCS/Tube
Category :Bipolar Transistors - BJT
Mfr :STMicroelectronics
Transistor Type :NPN
Current - Collector (Ic) (Max) :30 A
Voltage - Collector Emitter Breakdown (Max) :450 V
Vce Saturation (Max) @ Ib, Ic :500mV @ 4A, 20A
Power - Max :200 W
Operating Temperature :150°C (TJ)
Mounting Type :Through Hole
Package / Case :TO-247-3
Supplier Device Package :TO-247-3
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BUF420AW Bipolar (BJT) Transistor NPN 450 V 30 A 200 W Through Hole TO-247-3

Features:

STMicroelectronics PREFERRED SALESTYPE

HIGH VOLTAGE CAPABILITY

VERY HIGH SWITCHING SPEED

MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

LOW BASE-DRIVE REQUIREMENTS

Description:

The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds

and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching

speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies

and motor control applications.

Quick Detail:

Manufacturer
STMicroelectronics
Manufacturer Product Number
BUF420AW
Description
TRANS NPN 450V 30A TO247-3
Detailed Description
Bipolar (BJT) Transistor NPN 450 V 30 A 200 W Through Hole TO-247-3

Product Attributes:

TYPE
DESCRIPTION
Category
Single Bipolar Transistors
Mfr
STMicroelectronics
Package
Tube
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
450 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 4A, 20A
Power - Max
200 W
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Base Product Number
BUF420

Additional Resources:

ATTRIBUTE DESCRIPTION
Other Names
497-4085-5-NDR
497-4085-5
Standard Package 30

Data Picture:https://www.st.com/content/ccc/resource/technical/document/datasheet/9e/57/be/79/c8/be/4f/da/CD00002853.pdf/files/CD00002853.pdf/jcr:content/translations/en.CD00002853.pdf

BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3

BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3

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