Shenzhen Zhaocun Electronics Co., Ltd.
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IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
Features:IPP65R110CFDA
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolMOS |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25ﾂｰC | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
| Power Dissipation (Max) | 277.8W (Tc) |
| Operating Temperature | -40°C~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IPP65R110 |
Additional Resources
| ATTRIBUTE | DESCRIPTION |
| Other Names | IPP65R110CFDAAKSA1-ND |
| 448-IPP65R110CFDAAKSA1 | |
| SP000895234 | |
| Standard Package | 50 |
Data Picture:https://www.infineon.com/dgdl/Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
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