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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK

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Country/Region:china
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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK

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Brand Name :onsemi
Model Number :ATP114-TL-H
Certification :RoHS
Place of Origin :United States
MOQ :1000 PCS
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T
Supply Ability :3K PCS
Delivery Time :2-3 DAYS
Packaging Details :1000 PCS/Tube
Category :Single FETs, MOSFETs
Mfr :onsemi
FET Type :P-Channel
Technology :MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :60 V
Current - Continuous Drain (Id) @ 25°C :55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :4V, 10V
Rds On (Max) @ Id, Vgs :16mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs :92 nC @ 10 V
Vgs (Max) :±20V
Input Capacitance (Ciss) (Max) @ Vds :4000 pF @ 20 V
Power Dissipation (Max) :60W (Tc)
Operating Temperature :150°C (TJ)
Mounting Type :Surface Mount
Supplier Device Package :ATPAK
Package / Case :ATPAK (2 Leads+Tab)
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ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK

Features:ATP114-TL-H

Category Single FETs, MOSFETs
Mfr onsemi
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 20 V
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ATPAK
Package / Case ATPAK (2 Leads+Tab)
Base Product Number ATP114

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names ATP114-TL-HOSDKR
ATP114-TL-HOSTR
ATP114-TL-H-ND
ATP114-TL-HOSCT
Standard Package 3000

Data Picture:https://www.mouser.cn/datasheet/2/308/1/ATP114_D-2310176.pdf

ATP114-TL-H  Diode Transistor  P-Channel Mosfet 60 V 55A  Ta  60W  Tc Surface Mount ATPAK

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