Shenzhen Zhaocun Electronics Co., Ltd.

Customer first Integrity-based Development and innovation

Manufacturer from China
Active Member
3 Years
Home / Products / Power IC Chip /

SQJ488EP-T2_GE3 Vishay Siliconix N-Channel 100 V 42A Tc 83W Tc Surface Mount Ic PowerPAK SO-8

Contact Now
Shenzhen Zhaocun Electronics Co., Ltd.
City:shenzhen
Country/Region:china
Contact Person:Mrwill
Contact Now

SQJ488EP-T2_GE3 Vishay Siliconix N-Channel 100 V 42A Tc 83W Tc Surface Mount Ic PowerPAK SO-8

Ask Latest Price
Video Channel
Brand Name :Vishay
Model Number :SQJ488EP-T2_GE3
Certification :RoHS
Place of Origin :United States
MOQ :3000 PCS
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T
Supply Ability :15K PCS
Delivery Time :2-3 DAYS
Packaging Details :3000 PCS/Tape
Manufacturer :Vishay Siliconix
Category :Single FETs, MOSFETs
Product Number :SQJ488EP-T2_GE3
Technology :MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :100 V
Current - Continuous Drain (Id) @ 25°C :42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Rds On (Max) @ Id, Vgs :21mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id :2.5V @ 250µA
Vgs (Max) :±20V
Input Capacitance (Ciss) (Max) @ Vds :83W (Tc)
Operating Temperature :-55°C ~ 175°C (TJ)
Supplier Device Package :PowerPAK® SO-8
Mounting Type :Surface Mount
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

SQJ488EP-T2_GE3 N-Channel 100 V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Datasheet:SQJ488EP-T2_GE3

Category Single FETs, MOSFETs
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25掳C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 978 pF @ 50 V
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see http://www.vishay.com/doc?99912

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR-4 material)

d. Parametric verification ongoing

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

Data Picture:
SQJ488EP-T2_GE3 Vishay Siliconix   N-Channel 100 V 42A Tc 83W Tc Surface Mount Ic PowerPAK SO-8

Inquiry Cart 0