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AT24CM02-SSHD-B EEPROM Memory IC 2Mbit I²C 1 MHz 450 Ns 8-SOIC
Description:
The AT24CM02 provides 2,097,152 bits of Serial Electrically Erasable and Programmable Read-Only
Memory (EEPROM) organized as 262,144 words of 8 bits each. The device's cascading feature allows
up to four devices to share a common two-wire bus. This device is optimized for use in many industrial and
commercial applications where low-power and low-voltage operations are essential. The device is available
in space-saving 8-lead SOIC and 8-ball WLCSP packages. All packages operate from 1.7V to 5.5V.
Quick Detail:
| Manufacturer | Microchip Technology |
| Manufacturer Product Number | AT24CM02-SSHD-B |
| Description | IC EEPROM 2MBIT I2C 1MHZ 8SOIC |
| Detailed Description | EEPROM Memory IC 2Mbit I²C 1 MHz 450 ns 8-SOIC |
Product Attributes:
| TYPE | DESCRIPTION |
| Category | Memory |
| Mfr | Microchip Technology |
| Package | Tube |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | I²C |
| Clock Frequency | 1 MHz |
| Write Cycle Time - Word, Page | 10ms |
| Access Time | 450 ns |
| Voltage - Supply | 2.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | AT24CM02 |
Additional Resources:
| ATTRIBUTE | DESCRIPTION |
| Standard Package | 100 |
Features
• Low-Voltage and Standard-Voltage Operation:
– VCC = 1.7V to 5.5V
– VCC = 2.5V to 5.5V
• Internally Organized as 262,144 x 8 (2‑Mbit)
• Industrial Temperature Range: -40°C to +85°C
• I2C-Compatible (Two-Wire) Serial Interface:
– 100 kHz Standard Mode, 1.7V to 5.5V
– 400 kHz Fast Mode, 1.7V to 5.5V
– 1 MHz Fast Mode Plus (FM+), 2.5V to 5.5V
• Schmitt Triggers, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• Write-Protect Pin for Full Array Hardware Data Protection
• Ultra Low Active Current (3 mA maximum) and Standby Current (3 µA maximum)
• 256-byte Page Write Mode:
– Byte write and partial page writes allowed
• Random and Sequential Read Modes
• Self-Timed Write Cycle:
– All write operations complete within 10 ms maximum
• Built-in Error Detection and Correction
• High Reliability:
– Endurance: 1,000,000 write cycles
– Data retention: 100 years
• Green Package Options (Lead-free/Halide-free/RoHS compliant)
• Die Sale Options: Wafer Form and Bumped Wafers
Data Picture:
