Shenzhen Zhaocun Electronics Co., Ltd.
Customer first Integrity-based Development and innovation
Add to Cart
25LC512T-I/SN EEPROM Memory IC 512Kbit SPI 20 MHz 8-SOIC
Description:
The Microchip Technology Inc. 25LC512 is a 512 Kbit serial EEPROM memory with byte-level and page-level
serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based
products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial
Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI)
and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.
Quick Detail:
| Manufacturer | Microchip Technology |
| Manufacturer Product Number | 25LC512T-I/SN |
| Description | IC EEPROM 512KBIT SPI 8SOIC |
| Detailed Description | EEPROM Memory IC 512Kbit SPI 20 MHz 8-SOIC |
Product Attributes:
| TYPE | DESCRIPTION |
| Category | Memory |
| Mfr | Microchip Technology |
| Product Status | Active |
| Digi-Key Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 512Kbit |
| Memory Organization | 64K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 20 MHz |
| Write Cycle Time - Word, Page | 5ms |
| Voltage - Supply | 2.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | 25LC512 |
Additional Resources:
| ATTRIBUTE | DESCRIPTION |
| Other Names | 25LC512TISN |
| 25LC512T-I/SNDKR | |
| 25LC512T-I/SNTR | |
| 25LC512T-I/SNCT | |
| Standard Package | 3300 |
Features
• 20 MHz max. Clock Speed
• Byte and Page-level Write Operations:
- 128-byte page
- 5 ms max.
- No page or sector erase required
• Low-Power CMOS Technology:
- Max. Write Current: 5 mA at 5.5V, 20 MHz
- Read Current: 10 mA at 5.5V, 20 MHz
- Standby Current: 1A at 2.5V (Deep powerdown)
• Electronic Signature for Device ID
• Self-Timed Erase and Write cycles:
- Page Erase (5 ms, typical)
- Sector Erase (10 ms/sector, typical)
- Bulk Erase (10 ms, typical)
• Sector Write Protection (16K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• High Reliability:
- Endurance: 1 Million erase/write cycles
- Data Retention: >200 years
- ESD Protection: >4000V
• Temperature Ranges Supported:
- Industrial (I): -40°C to +85°C
- Extended (E): -40°C to +125°C
• RoHS Compliant
• Automotive AEC-Q100 Qualified
Data Picture:
